Journal of Inorganic Materials ›› 2021, Vol. 36 ›› Issue (2): 168-174.DOI: 10.15541/jim20190650

Special Issue: 能源材料论文精选(2021) 【虚拟专辑】钙钛矿材料(2020~2021) 【虚拟专辑】太阳能电池(2020~2021)

• RESEARCH PAPER • Previous Articles     Next Articles

Effect of SnO2 Annealing Temperature on the Performance of Perovskite Solar Cells

WANG Yanxiang(), GAO Peiyang, FAN Xueyun, LI Jiake, GUO Pingchun, HUANG Liqun, SUN Jian   

  1. College of Materials Science and Engineering, Jingdezheng Ceramic Institute, Jingdezheng 333403, China
  • Received:2019-12-25 Revised:2020-06-17 Published:2021-02-20 Online:2020-07-10
  • About author:WANG Yanxiang(1972-), female, professor. E-mail: yxwang72@163.com
  • Supported by:
    National Science and Technology Cooperation Project(2013DFA51000);National Natural Science Foundation of China(51462015);Key Research and Development Plan of Jiangxi Province(20181BBE58004)

Abstract:

Electron transport layer is a key part for perovskite solar cell (PSC), which can block holes and transmit electrons to reduce recombination. In this study, SnO2 was synthesized with low-temperature solution-processed method and used as electronic transport layer for perovskite solar cells. The influence of annealing temperature on the properties of SnO2 films and PSCs were systematically studied. The results showed that with the annealing temperatures at 60, 90, 120, 240 ℃, the surfaces of SnO2 films own more pores; while annealed at 150, 180, 210 ℃, the corresponding surfaces show fewer pores. It was found that the transmittance of FTO glass covered with SnO2 films is better than that of the bare FTO glass. With SnO2 annealed at 180 ℃, the electron mobility of the thin film is the highest. The corresponding PSC possesses the best transmission resistance, composite resistance, and superior photovoltaic performance. The photoelectric conversion efficiency, the open-circuit voltage, the short-circuit current and the filling factor were 17.28%, 1.09 V, 20.91 mA/cm2 and 75.91%, respectively.

Key words: perovskite solar cell, electronic transport layer, SnO2, annealing temperature

CLC Number: