Synthesis of Negative Thermal Expansion Sc2W3O12 Thin Film

doi:10.15541/jim20150219

Abstract

Abstract:

Orthorhombic Sc₂W₃O₁₂ thin films were deposited by pulsed laser deposition method. The microstructure, composition and morphology of the Sc₂W₃O₁₂ ceramic target and thin films were investigated using the X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The effects of the substrate temperature and oxygen pressure on the Sc₂W₃O₁₂ thin films were studied. The negative thermal expansion (NTE) properties of the Sc₂W₃O₁₂ ceramic target and thin film were characterized using high temperature XRD and thermal mechanical analysis (TMA). Results indicate that the compact orthorhombic Sc₂W₃O₁₂ ceramic target with excellent NTE can be prepared by sintering at 1000℃ for 6 h. The average thermal expansion coefficient of the orthorhombic Sc₂W₃O₁₂ ceramic target is -5.28×10^-6 K^-1 from room temperature to 600℃. All the as-deposited Sc₂W₃O₁₂ thin films are amorphous. The surface of the as-deposited Sc₂W₃O₁₂ thin film becomes smoother, but it becomes uneven when the substrate temperature increases. The Sc₂W₃O₁₂ thin film with excellent NTE is crystallized after annealing at 1000℃ for 7 min. The thermal expansion coefficient of the orthorhombic Sc₂W₃O₁₂ thin film is calculated to be -7.17×10^-6 K^-1 in the temperature range from room temperature to 600℃.

Key words: negative thermal expansion, thin film, pulsed laser deposition, Sc2W3O12

CLC Number:

O484
TB43

ZHANG Zhi-Ping, LIU Hong-Fei, PAN Kun-Min, CHEN Xiao-Bing, ZENG Xiang-Hua. Synthesis of Negative Thermal Expansion Sc₂W₃O₁₂ Thin Film[J]. Journal of Inorganic Materials, 2015, 30(12): 1278-1282.

Figures/Tables 7

Fig. 1 XRD pattern of Sc2W3O12 ceramic target sintered at 1000℃ for 6 h

Fig. 2 Cross-section SEM image of Sc2W3O12 ceramic target

Fig. 3 Thermal expansion curve of the ceramic Sc2W3O12 target

Fig. 4 XRD patterns of Sc2W3O12 target and thin films. (a) Sc2W3O12 target;(b) Sc2W3O12 thin film;(c) Amorphous Sc2W3O12 thin film

Fig. 5 SEM images of as-deposited and annealed Sc2W3O12 thin films prepared at different conditions. (a) Room temperature, 5 Pa; (b) 300℃, 5 Pa; (c) 500℃, 5 Pa; (d) 500℃, 5 Pa; (e) 500℃, 10 Pa; (f) 500℃,20 Pa; (g) Annealed at 1000℃ for 7 min; (h) Annealed at 1000℃ for 7 min

Fig. 6 High temperature XRD patterns of the orthorhombic Sc2W3O12 thin film

Fig. 7 Fitting curve and lattice constants of the orthorhombic Sc2W3O12 thin film as a function of temperature

References 16

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Synthesis of Negative Thermal Expansion Sc₂W₃O₁₂ Thin Film

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