Wettability and Wetting Process in Cu/Ti3SiC2 System

doi:10.15541/jim20140115

Abstract

Abstract:

Effects of wetting temperature and Ti₃SiC₂constituent elements Si and Ti on the wettability of Cu/Ti₃SiC₂ system were investigated in vacuum via sessile drop technique. The results show that the wettability of Cu/Ti₃SiC₂ system is fairly well at elevated temperature because of the reaction between Cu and Ti₃SiC₂. The reaction zone in Cu/Ti₃SiC₂ interface becomes larger and deeper with the temperature increasing, and which leads to the decrease in contact angle. Its reaction rate is accelerated when the temperature exceeds 1250℃. The minimum contact angle of 15.1° is measured at 1270℃. XRD and SEM results indicate that the reaction products are TiC_x and Cu_xSi_y, and the reaction layer is mainly consisted of Cu, Ti₃SiC₂, TiC_x and Cu_xSi_y depending on the wetting temperature. The wettability of Cu/Ti₃SiC₂ system is improved by the reaction layer. Adding alloying element Si or Ti to Cu is harmful to the wettability between Cu and Ti₃SiC₂ since Si inhibits the decomposition of Ti₃SiC₂ and Ti hinders the infiltration of Cu into Ti₃SiC₂.

Key words: Cu/Ti3SiC2, wettability, interfacial reaction

CLC Number:

TG148

LU Jin-Rong, ZHOU Yang, LI Hai-Yan, ZHENG Yong, LI Shi-Bo, HUANG Zhen-Ying. Wettability and Wetting Process in Cu/Ti₃SiC₂ System[J]. Journal of Inorganic Materials, 2014, 29(12): 1313-1319.

Figures/Tables 10

Fig. 1 Relationship between contact angle and temperature for Cu/Ti3SiC2 system

Fig. 2 Photographs of the wetting interface of Cu/Ti3SiC2 tested at different temperatures (a) 1100℃; (b) 1200℃; (c) 1300℃

Fig. 3 Relationship between the diffusion depth of Cu and wetting temperature

Fig. 4 XRD patterns of the wetting interface of Cu/Ti3SiC2 wetted at different temperatures

Fig. 5 Microstructure of the longitudinal section of Ti3SiC2 wetted by Cu at 1270℃ (a) Microstructure; (b) Enlarged image of the rectangular area marked in layer A showing the positions for EDS spot analysis; (c) Enlarged image of the rectangular area marked in the interfacial area between layer A and layer B; (d) Enlarged image of the rectangular area marked in layer B

Table 1 EDS spot analyses in the interfacial area of Cu/Ti3SiC2 system as shown in Fig. 5(b)

Atomic fraction / %
	C	Si	Ti	Cu
1	41.87	8.05	42.09	7.99
2	46.31	12.04	41.65	0
3	45.36	7.27	25.67	21.70

Fig. 6 EDS line scanning analysis of Cu from layer A to layer B as shown in Fig. 5(a)

Fig. 7 Relationship between the contact angle and the experimental temperature for Cu-1wt%Si/Ti3SiC2 system

Fig. 8 Relationship between the contact angle and the experimental temperature for Cu-1wt%Ti/Ti3SiC2 system

Fig. 9 Morphologies and element distributions of Ti in the base area of Cu-1wt%Ti alloy block (a1) Morphology before wetting experiment; (a2) Distribution of Ti in (a1); (b1) Morphology after wetting experiment; (b2) Distribution of Ti in (b1)

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Wettability and Wetting Process in Cu/Ti₃SiC₂ System

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