棱角对NH4H2PO4晶体Z切片薄表面层生长影响的研究

doi:10.15541/jim20160047

摘要/Abstract

摘要：

本研究制备了具有不同形式棱角的NH₄H₂PO₄(ADP)晶体Z切片样品。通过实验, 观察不同Z切片薄表面层形成及生长特性, 并计算了不同棱角情况下薄表面层的切向生长速度V及其动力学系数β。结果表明, 正常棱角的缺失, 影响Z切片对其原有形态的“判断”, 进而影响薄表面层的形成及生长; 薄表面层在正常棱角处相遇形成相交角后, 将主要在相交角处形成并向棱边扩展生长, 表明棱角可能为薄表面层的主要生长源。此外, 计算结果显示, 正常棱角处薄表面层切向生长的平均生长动力学系数β_n为131.8 μm/s, 远大于棱角缺失后薄表面层切向生长的平均生长动力学系数β_a=11.6 μm/s, 即正常棱角缺失后, 薄表面层的切向生长速度将大大降低。

关键词: ADP晶体, 薄表面层, 棱角, 生长动力学

Abstract:

The Z-cut NH₄H₂PO₄(ADP) crystal plate samples with different types of edge angle were prepared. During crystal growth experiments, formation and growth characteristics of thin surface layers of different Z-cut plate samples were observed. Meanwhile, the tangential growth rate V and the corresponding kinetics coefficients β of thin surface layers were calculated in the present study. The results show that destruction of the normal angles has significantly influences on “judgment” of the original morphology of Z-cut plate, and further influence formation and growth of thin surface layers. When the thin surface layers meet with each other at normal edge angles, where the intersecting angles form, the thin surface layers generate mainly at intersecting angles and spread out along the edges. This phenomenon suggests that edge angles may be the main origin of thin surface layers. In addition, the average growth kinetics coefficient β_n at normal angle is calculated to be 131.8 μm/s, much higher than 11.6 μm/s of β_a at destroyed angle. These experimental and calculated results suggest that lack of normal angles remarkably decreases the tangential growth rate of thin surface layers.

Key words: ADP crystal, thin surface layer, edge angles, growth kinetics

中图分类号:

程高, 李明伟, 尹华伟. 棱角对NH₄H₂PO₄晶体Z切片薄表面层生长影响的研究[J]. 无机材料学报, 2016, 31(11): 1177-1183.

CHENG Gao, LI Ming-Wei, YIN Hua-Wei. Effect of Edge Angles on Growth of Thin Surface Layer of Z-cut NH₄H₂PO₄ Crystal[J]. Journal of Inorganic Materials, 2016, 31(11): 1177-1183.

图/表 9

图1 显微实时观测装置简图

Fig. 1 Schematic of experimental apparatus for the in-suit observationST: Electronic hot plate; AM: Air lens; S1: Growth solution; S2: Crystal sample; MS: Optical microscope (Nikon 90i); CAM: Camera; CCD: Charge coupled device; CPU: Computer

图2 缺失一条棱边ADP晶体Z切片薄表面层生长特性

Fig. 2 Growth characteristics of thin surface layers of Z-cut ADP crystal plate after one edge being cut out(a) Schematic of ADP crystal sample before (ABCE) and after (ABCD) being cut out the edge AE; (b) Emergence of segmented growth of thin surface layers along edge AB(indicated by the arrow) and CD; (c) (101) face starting formation by thin surface layer after edge AE regeneration; (d) Schematic of the segmented growth of thin layer along edge AB

图3 缺失相交角∠ADP晶体Z切片的薄表面层生长特性

Fig. 3 Growth characteristics of thin surface layers of Z-cut ADP crystal plate without three normal angles(a) Schematic of ADP crystal sample, and the virtual edges HE, HC; (b) Thin surface layers generated from the normal angle ∠CDE and ($\overline{1}$011) face, as indicated by arrows; (e) Formation of prismatic faces formed by thin layer; (f) The final regenerated formation

图4 无正常棱角∠ADP晶体Z切片薄表面层生长特性

Fig. 4 Growth characteristics of thin surface layers of Z-cut ADP crystal plate without normal angles(a) Schematic of the crystal sample; (b) (100) face restored by thin surface layers; (c) Schematic of crystal after restoration of prismatic faces; (d-f) Pyramidal faces rapid restoration by thin surface layers forming from each angle

图5 光学显微镜实时观察ADP晶体Z切片棱角处薄表面层形成及生长过程

Fig. 5 In-suit observation of formation and growth of thin surface layers originated from angles under optical microscope(a) Extreme thin surface layers formed at edges; (b,c) Thin surface layers spread to edge angle, and the intersecting angle 1 formed; (d-f) Thin surface layers continuously formed at the intersecting angle and spread to edge

图6 ∠FAE部分恢复后该处薄表面层生长特性

Fig. 6 In-suit microscopic observation of the growth of thin surface layer at ∠FAE after partly restored(a) Intersecting ∠2 formed at ∠FAE; (b) Thin surface layers generated rapidly at intersecting ∠2; (c,d) Thin surface layers continuously spread to edge, as shown by white arrows

图7 显微实验样品

Fig. 7 Samples used in microscopic experiments and normal ∠1, ∠2, ∠5, and angles with destroy at different degrees (∠3, ∠4 and ∠6)

表1 不同形式棱角处薄表面层切向生长速度

Table 1 Tangental growth rate of thin surface layer at different angle types

V₁ /(μm·s^-1)	V₂ /(μm·s^-1)	V₃ /(μm·s^-1)	V₄ /(μm·s^-1)	V₅ /(μm·s^-1)	V₆ /(μm·s^-1)	V_3r /(μm·s^-1)
1.386	1.400	0.090	0.080	1.190	0.160	1.090

表2 不同形式棱角处薄表面层生长动力学系数

Table 2 Kinetic coefficients of thin surface layer at different angle types

β₁ /(μm·s^-1)	β₂ /(μm·s^-1)	β₃ /(μm·s^-1)	β₄ /(μm·s^-1)	β₅ /(μm·s^-1)	β₆ /(μm·s^-1)	β_3r /(μm·s^-1)
144.300	150.000	9.375	8.300	120.000	17.000	113.500

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棱角对NH₄H₂PO₄晶体Z切片薄表面层生长影响的研究

Effect of Edge Angles on Growth of Thin Surface Layer of Z-cut NH₄H₂PO₄ Crystal

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