NaCu3Ti3NbO12和NaCu3Ti3SbO12陶瓷的巨介电性质及NaCu3Ti3SbO12陶瓷的低介电损耗特性

doi:10.3724/SP.J.1077.2014.13212

无机材料学报 ›› 2014, Vol. 29 ›› Issue (1): 62-66.DOI: 10.3724/SP.J.1077.2014.13212

NaCu₃Ti₃NbO₁₂和NaCu₃Ti₃SbO₁₂陶瓷的巨介电性质及NaCu₃Ti₃SbO₁₂陶瓷的低介电损耗特性

郝文涛^1,2, 徐攀攀³, 张家良³, 曹恩思^1,2, 彭华^1,2

(1. 太原理工大学新型传感器与智能控制教育部重点实验室, 太原 030024; 2. 太原理工大学物理与光电工程学院, 太原 030024; 3. 山东大学物理学院, 济南 250100)

收稿日期:2013-04-15 修回日期:2013-05-22 出版日期:2014-01-20 网络出版日期:2013-12-09

Giant Dielectric-Permittivity Property of NaCu₃Ti₃NbO₁₂ and NaCu₃Ti₃SbO₁₂ Ceramics and Low Dielectric Loss in NaCu₃Ti₃SbO₁₂ Ceramics

HAO Wen-Tao^1,2, XU Pan-Pan³, ZHANG Jia-Liang³, CAO En-Si^1,2, PENG Hua^1,2

(1. Key Laboratory of Advanced Transducers and Intelligent Control Systems, Taiyuan University of Technology, Taiyuan 030024, China; 2. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China; 3. School of Physics, Shandong University, Jinan 250100, China)

Received:2013-04-15 Revised:2013-05-22 Published:2014-01-20 Online:2013-12-09

摘要/Abstract

摘要： 利用传统的固相反应工艺制备了NaCu₃Ti₃NbO₁₂和NaCu₃Ti₃SbO₁₂陶瓷, 对它们的介电性质和晶格结构进行了研究。结果显示, 两种陶瓷都存在低频介电常数高于7×10³的巨介电行为; 在室温或者更低温度下, 两种陶瓷的介电频谱(40 Hz~110 MHz)的实部只出现一个介电弛豫, 而更高温度下的介电频谱的实部则会有两个介电弛豫; XRD结果显示两种陶瓷中都含有少量的CuO第二相。这些实验结果能用CCTO陶瓷中的内阻挡层电容效应解释。NaCu₃Ti₃SbO₁₂陶瓷的室温介电损耗在40 Hz到7 kHz的宽频率范围内低于0.05, 并且其1 kHz的介电损耗在-50~ 80℃的宽温度范围内低于0.05, 这对于实际应用有重要意义。

关键词: NaCu₃Ti₃NbO₁₂, NaCu₃Ti₃SbO₁₂, 巨介电性质, 内阻挡层电容效应

Abstract: NaCu₃Ti₃NbO₁₂ and NaCu₃Ti₃SbO₁₂ ceramics were prepared by the conventional solid state reaction method, and their dielectric properties and crystalline structure were investigated. It was found that they were quite similar with the CaCu₃Ti₄O₁₂ ceramics, showing giant dielectric-permittivity properties with ε' larger than 7×10³. Within the measuring frequency range of 40 Hz-100 MHz, a single dielectric relaxation with the characteristic frequency around 1 MHz was detected at room temperature or below whereas an additional one in low frequency region is also observed at high temperatures. Furthermore, the existence of CuO secondary phase was confirmed by X-ray diffraction. In general, the results can be explained by the similar mechanism of internal barrier layer capacitance effect which was formerly proposed for CaCu₃Ti₄O₁₂ceramics. Here, it is worthy pointing out that the tanδ of NaCu₃Ti₃SbO₁₂ ceramics is lower than 0.05 in a large frequency range from 40 Hz to 7 kHz, and the tanδ at 1 kHz is lower than 0.05 in a large temperature range of -50℃ to 80℃ at 1 kHz, which is a desirable characteristic for practical applications.

Key words: NaCu₃Ti₃NbO₁₂, NaCu₃Ti₃SbO₁₂, giant dielectric-permittivity phenomena, internal barrier layer capacitance effect

中图分类号:

TM283

郝文涛, 徐攀攀, 张家良, 曹恩思, 彭华. NaCu₃Ti₃NbO₁₂和NaCu₃Ti₃SbO₁₂陶瓷的巨介电性质及NaCu₃Ti₃SbO₁₂陶瓷的低介电损耗特性[J]. 无机材料学报, 2014, 29(1): 62-66.

HAO Wen-Tao, XU Pan-Pan, ZHANG Jia-Liang, CAO En-Si, PENG Hua. Giant Dielectric-Permittivity Property of NaCu₃Ti₃NbO₁₂ and NaCu₃Ti₃SbO₁₂ Ceramics and Low Dielectric Loss in NaCu₃Ti₃SbO₁₂ Ceramics[J]. Journal of Inorganic Materials, 2014, 29(1): 62-66.

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NaCu₃Ti₃NbO₁₂和NaCu₃Ti₃SbO₁₂陶瓷的巨介电性质及NaCu₃Ti₃SbO₁₂陶瓷的低介电损耗特性

Giant Dielectric-Permittivity Property of NaCu₃Ti₃NbO₁₂ and NaCu₃Ti₃SbO₁₂ Ceramics and Low Dielectric Loss in NaCu₃Ti₃SbO₁₂ Ceramics

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