纳米金属氧化物制备多晶Cu(In,Ga)Se2薄膜反应过程及其性能研究

doi:10.3724/SP.J.1077.2013.12505

无机材料学报 ›› 2013, Vol. 28 ›› Issue (7): 701-706.DOI: 10.3724/SP.J.1077.2013.12505 CSTR: 32189.14.SP.J.1077.2013.12505

纳米金属氧化物制备多晶Cu(In,Ga)Se₂薄膜反应过程及其性能研究

郑春满, 韦永滔, 谢凯, 韩喻

(国防科学技术大学航天科学与工程学院, 材料科学与工程系, 长沙410073)

收稿日期:2012-08-17 修回日期:2012-10-29 出版日期:2013-07-20 网络出版日期:2013-06-19
基金资助:
湖南省自然科学基金 (10JJ4045); 国防科技大学校预研项目(JC08-01-06)

Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties

ZHENG Chun-Man, WEI Yong-Tao, XIE Kai, HAN Yu

(Department of Materials Science and Engineering, School of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China)

Received:2012-08-17 Revised:2012-10-29 Published:2013-07-20 Online:2013-06-19
Supported by:
Natural Science Foundation of Hunan Province, China (10JJ4045); Research Fund of National University of Defense Technology (JC08-01-06)

摘要/Abstract

摘要： 以铜铟镓纳米金属氧化物为起始原料, 采用化学还原+固体硒源后硒化的方法在不锈钢表面制备出多晶Cu(In,Ga)Se₂ (CIGS)薄膜。采用场发射扫描电镜、高分辨透射电镜、能谱分析和X射线衍射等方法对制备过程中材料组成和结构的演变进行了研究, 采用霍尔效应测试仪和吸收光谱分析等对多晶CIGS薄膜的性能进行了表征。研究结果表明, 纳米金属氧化物主要含CuO、In₂O₃、Ga₂O₃和铜-铟、铜-镓二元合金氧化物等成分, 在还原反应中逐渐转变成Cu₁₁In₉、Cu₉In₄等产物, 同时薄膜中形成大量孔隙; 硒化过程中, 硒蒸气沿孔隙通道进入还原产物的晶格, 反应生成CIS和CGS, 从而形成具有黄铜矿结构的多晶CIGS薄膜; 多晶CIGS薄膜表面晶粒排列紧密, 属于p型半导体, 其载流子浓度为2.3×10¹⁵ cm^-3, 迁移率为217 cm²/(V·s), 电阻率为36 Ω·cm, 带隙宽度约为1.15 eV。

关键词: 氧化物, Cu(In,Ga)Se₂薄膜, 光学性能, 反应过程

Abstract: Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin film was prepared by non-vacuum method with nano-metal oxide as starting materials. The evolution of the composition and structure during the preparation process was investigated by field emission scanning electron microscope, high resolution transmission electron microscope, energy dispersive analysis and X-ray diffraction. The properties of CIGS film was characterized using Hall Effect tester and absorption spectroscopic analysis. The results show that the nano-metal oxide is consist of CuO, In₂O₃, Ga₂O₃ and copper-indium, copper-gallium binary alloy oxides. The metal oxides gradually transform into Cu₁₁In₉ and Cu₉In₄ during the reduction reaction. Moreover, it forms a large number of pores, which is benefit for the selenide reaction. The selenium vapors enter the film along the pore, react with the reduction product and form CIS and CGS in the selenide process. Then, the polycrystalline CIGS film with the chalcopyrite structure forms. The carrier concentration, mobility and the resistivity of CIGS film are about 2.3×10¹⁵ cm^-3, 217 cm²/(V·s) and 36 Ω·cm, respectively. The obtained thin film is a p-type semiconductor with a bandgap of about 1.15 eV.

Key words: oxide, Cu(In,Ga)Se₂ thin-film, optical properties, reaction process

中图分类号:

O649

郑春满, 韦永滔, 谢凯, 韩喻. 纳米金属氧化物制备多晶Cu(In,Ga)Se₂薄膜反应过程及其性能研究[J]. 无机材料学报, 2013, 28(7): 701-706.

ZHENG Chun-Man, WEI Yong-Tao, XIE Kai, HAN Yu. Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties[J]. Journal of Inorganic Materials, 2013, 28(7): 701-706.

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纳米金属氧化物制备多晶Cu(In,Ga)Se₂薄膜反应过程及其性能研究

Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties

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