用于GaN基发光二极管的蓝宝石图形衬底制备进展

doi:10.3724/SP.J.1077.2012.11785

无机材料学报 ›› 2012, Vol. 27 ›› Issue (9): 897-905.DOI: 10.3724/SP.J.1077.2012.11785

• 综述 • 下一篇

用于GaN基发光二极管的蓝宝石图形衬底制备进展

崔林¹, 汪桂根¹, 张化宇¹, 周福强¹, 韩杰才^1,²

(1. 哈尔滨工业大学深圳研究生院, 深圳518055; 2. 哈尔滨工业大学复合材料与结构研究所, 哈尔滨150080)

收稿日期:2011-12-18 修回日期:2012-03-02 出版日期:2012-09-20 网络出版日期:2012-08-28
作者简介:崔林(1983–), 男, 博士研究生. E-mail: cuilin0512@gmail.com
基金资助:
国家自然科学基金(50902028, 51172054); 深圳市基础研究计划项目(JC200903120169A);哈尔滨工业大学科研创新基金(HIT.NSFIR.2011123)

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

CUI Lin¹, WANG Gui-Gen¹, ZHANG Hua-Yu¹, ZHOU Fu-Qiang¹, HAN Jie-Cai^1,2

(1. Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, China; 2. Center for Composite Materials, Harbin Institute of Technology, Harbin 150080, China)

Received:2011-12-18 Revised:2012-03-02 Published:2012-09-20 Online:2012-08-28
About author:Cui Lin.E-mail: cuilin0512@gmail.com
Supported by:
National Natural Science Foundation of China (50902028, 51172054); Basic Research Plan Program of Shenzhen City in 2009 (JC200903120169A); Natural Scientific Research Innovation Foundation in Harbin Institute of Technology (HIT. NSFIR. 2011123)

摘要/Abstract

摘要： 近几年, 图形化蓝宝石衬底因其作为GaN基发光二极管外延衬底, 不仅能降低GaN外延薄膜的线位错密度, 还能提高LED的光提取效率而引起国内外许多科研机构的广泛研究兴趣. 本文综述了图形化蓝宝石衬底提高GaN基发光二极管性能的作用机理, 重点评述了目前图形化蓝宝石衬底的制备方法(湿法刻蚀、干法刻蚀、固相反应)和图形尺寸(微米图形化、纳米图形化), 分析比较了不同制备方法和图形尺寸制备蓝宝石图形衬底对GaN基发光二极管性能改善, 最后针对蓝宝石图形衬底制备存在的问题对其今后的发展方向做出展望.

关键词: 图形化蓝宝石衬底, 氮化镓, 发光二极管, 横向外延过生长, 综述

Abstract: GaN-based light emitting diodes are extensively used for light emitting diodes in the green to ultraviolet (UV) wavelength region and have already been widely used in traffic signals, outdoor displays, full-color displays and back lighting in liquid-crystal displays. Although GaN-based light emitting diodes are commercially available, it is still difficult to manufacture highly efficient GaN-based light emitting diodes due to the high dislocation density and the low light extraction efficiency. Patterned sapphire substrates for GaN-based light-emitting diodes have attracted much interest in recent years because it can not only reduce the threading dislocation density of epitaxial GaN films, but also improve the light extraction efficiency of GaN-based light-emitting diodes. A comprehensive review is presented on the mechanisms responding for performance enhancement of GaN-based light emitting diodes on patterned sapphire substrates, methods of preparing patterned sapphire substrates and pattern-size of patterned sapphire substrates. What is more, improved performance of GaN-based light-emitting diodes on patterned sapphire substrates prepared by different methods and pattern-size are further discussed in detail. In view of the existing problems, the prospects for future development of patterned sapphire substrates are also proposed.

Key words: patterned sapphire substrate, GaN, LED, epitaxial lateral overgrowth, review

中图分类号:

TN304

崔林, 汪桂根, 张化宇, 周福强, 韩杰才. 用于GaN基发光二极管的蓝宝石图形衬底制备进展[J]. 无机材料学报, 2012, 27(9): 897-905.

CUI Lin, WANG Gui-Gen, ZHANG Hua-Yu, ZHOU Fu-Qiang, HAN Jie-Cai. Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes[J]. Journal of Inorganic Materials, 2012, 27(9): 897-905.

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用于GaN基发光二极管的蓝宝石图形衬底制备进展

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

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