基于Al2O3介质的Ga2O3 MOSFET器件制备研究

doi:10.15541/jim20170528

无机材料学报 ›› 2018, Vol. 33 ›› Issue (9): 976-980.DOI: 10.15541/jim20170528 CSTR: 32189.14.10.15541/jim20170528

基于Al₂O₃介质的Ga₂O₃ MOSFET器件制备研究

吕元杰, 宋旭波, 何泽召, 谭鑫, 周幸叶, 王元刚, 顾国栋, 冯志红

河北半导体研究所, 专用集成电路国家级重点实验室, 石家庄 050051

收稿日期:2017-11-09 修回日期:2018-01-04 出版日期:2018-09-20 网络出版日期:2018-08-14
作者简介:吕元杰(1985-), 男, 博士, 副研究员. E-mail: yuanjielv@163.com
基金资助:
国家自然科学基金(61674130, 61604137)

Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

LV Yuan-Jie, SONG Xu-Bo, HE Ze-Zhao, TAN Xin, ZHOU Xing-Ye, WANG Yuan-Gang, GU Guo-Dong, FENG Zhi-Hong

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2017-11-09 Revised:2018-01-04 Published:2018-09-20 Online:2018-08-14
About author:LV Yuan-Jie. E-mail: yuanjielv@163.com
Supported by:
National Natural Science Foundation of China (61674130, 61604137)

摘要/Abstract

摘要：

采用金属有机化学气相沉积(MOCVD)方法在Fe掺杂半绝缘(010)Ga₂O₃同质衬底上外延得到n型β-Ga₂O₃薄膜材料, 材料结构包括600 nm未掺杂的Ga₂O₃缓冲层和200 nm Si掺杂沟道层。对掺杂浓度为3.0×10¹⁷和1.0× 10¹⁸cm^-3的样品进行了高温合金欧姆接触实验, 在掺杂浓度为3.0×10¹⁷ cm^-3的样品上难以实现良好的欧姆接触, 掺杂浓度为1.0×10¹⁸cm^-3的样品实现了欧姆接触最低值(9.8 Ω•mm)。基于掺杂浓度为1.0×10¹⁸cm^-3的n型β-Ga₂O₃薄膜材料, 采用原子层沉积的Al₂O₃作为栅下绝缘介质层, 研制出Ga₂O₃金属氧化物半导体场效应晶体管(MOSFET)。栅压为2 V时, 器件漏源饱和电流达到108 mA/mm, 器件峰值跨导达到17 mS/mm。由于栅漏电特性较差, 器件的三端击穿电压仅为23 V@V_gs = -12 V。采用高介电常数的HfO₂或者Al₂O₃/ HfO₂复合结构作为栅下介质能够改善栅漏电特性, 提升器件的击穿性能。

关键词: 氧化镓, 金属氧化物半导体场效应晶体管, 漏源饱和电流, 栅漏电

Abstract:

n-typed β-Ga₂O₃was homoepitaxially grown by metal organic chemical vapor deposition (MOCVD) on a Fe-doped semi-insulating (010) Ga₂O₃substrate. The structure consisted of a 600 nm undoped (UID) Ga₂O₃ buffer layer and 200 nm Si-doped channel layer. High-temperature Ohmic alloy experiments were taken on two kinds of n-typed β-Ga₂O₃ with Si donor concentrations of 3.0×10¹⁷and 1.0×10¹⁸ cm^-3. It’s hard to realize good Ohmic contact on the β-Ga₂O₃epitaxial layer with donor concentrations of 3.0×10¹⁷cm^-3. The lowest Ohmic value of 9.8 Ω•mm was obtained on the substrate with donor concentrations of 1.0×10¹⁸cm^-3. Metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated based on homoepitaxial β-Ga₂O₃ film with donor concentrations of 1.0×10¹⁸cm^-3, in which Al₂O₃ grown by atomic layer deposition (ALD) was used as gate dielectric. The drain saturation current of the fabricated device reached 108 mA/mm at V_gs of 2 V, and a high peak transconductance of 17 mS/mm was obtained. Due to poor gate leakage, the three-terminal off-state breakdown voltage was just 23 V at V_gs = -12 V. The breakdown characteristics can be improved by introducing HfO₂ with high dielectric constant or Al₂O₃/HfO₂ composite structure.

Key words: Ga₂O₃, MOSFET, drain saturation current, gate leakage

中图分类号:

TQ174

吕元杰, 宋旭波, 何泽召, 谭鑫, 周幸叶, 王元刚, 顾国栋, 冯志红. 基于Al₂O₃介质的Ga₂O₃ MOSFET器件制备研究[J]. 无机材料学报, 2018, 33(9): 976-980.

LV Yuan-Jie, SONG Xu-Bo, HE Ze-Zhao, TAN Xin, ZHOU Xing-Ye, WANG Yuan-Gang, GU Guo-Dong, FENG Zhi-Hong. Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric[J]. Journal of Inorganic Materials, 2018, 33(9): 976-980.

图/表 7

图1 Ga2O3 MOSFET器件横截面结构示意图

Fig. 1 Schematic cross section of the fabricated Ga2O3 MOSFET

图2 不同Si掺杂浓度下欧姆接触电阻随退火温度的变化

Fig. 2 Change of Ohmic contact resistances with annealing temperature at different Si donor concentrations

图3 Ga2O3 MOSFET器件显微镜照片

Fig. 3 Microscope image of the fabricated Ga2O3 MOSFET

图4 Ga2O3 MOSFET器件输出特性曲线

Fig. 4 Output characteristics of the Ga2O3 MOSFET

表1 Ga2O3 MOSFET电学参数汇总

Table 1 Summary of electrical parameters for Ga2O3 MOSFET

	Doping concentration/cm^-3	Carrier mobility/ (cm²•V^-1•s^-1)	Drain source saturation current/ (mA•mm^-1)	Breakdown voltage/V	Ref.
1	3.0×10¹⁷	NR	26	370	[4]
2	4.8×10¹⁷	19.7	60	200	[1]
3	3.0×10¹⁷	70-95	78	755	[9]
4	2.3×10¹⁷	24	0.24	612	[11]
5	4.0×10¹⁷	111	80	479	[5]
6	1.3×10¹⁸	96	150	NR	[15]
	3.0×10¹⁷	42			This work
	1.0×10¹⁸	20	108	23	This work

图5 Ga2O3 MOSFE器件的转移特性曲线

Fig. 5 Transfer characteristics of the Ga2O3 MOSFET

图6 Ga2O3 MOSFE器件的三端击穿特性曲线

Fig. 6 Three-terminal off-state breakdown characteristics for the Ga2O3 MOSFET

参考文献 16

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基于Al₂O₃介质的Ga₂O₃ MOSFET器件制备研究

Ga₂O₃ MOSFET Device with Al₂O₃ Gate Dielectric

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