Ti 4+掺杂M型六角铁氧体BaFe12-xTixO19陶瓷的磁学和介电特性

doi:10.15541/jim20200088

无机材料学报 ›› 2021, Vol. 36 ›› Issue (1): 43-48.DOI: 10.15541/jim20200088

所属专题：【信息功能】电介质材料

Ti ⁴⁺掺杂M型六角铁氧体BaFe_12-xTi_xO₁₉陶瓷的磁学和介电特性

柏嘉玮¹,杨静¹(),吕桢飞¹,唐晓东^1,²()

华东师范大学 1. 物理与电子科学学院, 电子科学系
^2. 极化材料与器件教育部重点实验室, 上海 200241

收稿日期:2020-02-24 修回日期:2020-04-27 出版日期:2021-01-20 网络出版日期:2020-07-21
作者简介:柏嘉玮(1992-), 男, 博士研究生. E-mail: bai_jiawei@163.com
基金资助:
国家自然科学基金(61574058);国家自然科学基金(61674058)

Magnetic and Dielectric Properties of Ti ⁴⁺-doped M-type Hexaferrite BaFe_12-_xTi_xO₁₉ Ceramics

BAI Jiawei¹,YANG Jing¹(),LÜ Zhenfei¹,TANG Xiaodong^1,²()

^1. Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
^2. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China

Received:2020-02-24 Revised:2020-04-27 Published:2021-01-20 Online:2020-07-21
About author:BAI Jiawei(1992-), male, PhD candidate. E-mail: bai_jiawei@163.com
Supported by:
National Natural Science Foundation of China(61574058);National Natural Science Foundation of China(61674058)

摘要/Abstract

摘要：

六角铁氧体由于其具备高温下的低场磁电耦合特性, 有望应用于新型多态存储器及磁电传感器等微电子器件。利用Ti ⁴⁺离子对M型六角铁氧体BaFe₁₂O₁₉进行B位掺杂, 不仅可以调控材料的磁结构和磁学特性, 同时, Ti离子在六角铁氧体B位的不等价掺杂还可以产生相关缺陷、载流子和变价Fe离子进而改变其电学特性。本研究采用固相烧结法制备了M型六角铁氧体BaFe_12-_xTi_xO₁₉ (x=0, 0.5, 1, 1.5)陶瓷, 并对其进行了性能表征和测试, 研究了B位Ti ⁴⁺掺杂对材料结构、磁学和介电特性的影响。研究结果表明, BaFe_12-_xTi_xO₁₉呈现上、下自旋反平行的亚铁磁序。当Ti ⁴⁺离子掺杂量较低时, 更易取代位于上自旋格子的Fe ³⁺离子, 其磁化强度随Ti掺杂量的增加而减小; 随着Ti ⁴⁺离子掺杂量的进一步增加, 位于下自旋格子的Fe ³⁺离子也会逐渐被取代, 此时, 饱和磁化强度随掺杂量的增加而增加。此外, Ti ⁴⁺离子的引入也会使晶粒内部呈现半导性, 在晶粒/晶界处产生Maxwell-Wagner界面极化, 故而M型六角铁氧体BaFe_12-_xTi_xO₁₉陶瓷会出现明显的低频介电增强并伴随着Maxwell-Wagner介电弛豫。

关键词: B位离子掺杂, M型六角铁氧体, 磁学特性, 介电特性

Abstract:

Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe₁₂O₁₉with Ti ⁴⁺ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe_12-_xTi_xO₁₉ (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti ⁴⁺ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe_12-_xTi_xO₁₉ is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti ⁴⁺ ions is low, it tends to replace Fe ³⁺ ions with up-spin. And the magnetization decreases with the increase of Ti dopant. However, with the further increase of Ti ⁴⁺ doping, Fe ³⁺ ions with down-spin is also replaced, and the saturation magnetization increases with the increase of x. The introduction of Ti ⁴⁺ ions can also make the grains to be semiconductor, which results in the Maxwell-Wagner interface polarization behavior at the interfaces between semiconducting grains and grain-boundaries. Hence, M-type hexaferrite BaFe_12-_xTi_xO₁₉ ceramics appear obvious low frequency dielectric enhancement accompanied by a Maxwell-Wagner dielectric relaxation.

Key words: B-site doping, M-type hexaferrite, magnetic property, dielectric property

中图分类号:

TQ174

柏嘉玮, 杨静, 吕桢飞, 唐晓东. Ti ⁴⁺掺杂M型六角铁氧体BaFe_12-xTi_xO₁₉陶瓷的磁学和介电特性[J]. 无机材料学报, 2021, 36(1): 43-48.

BAI Jiawei, YANG Jing, LÜ Zhenfei, TANG Xiaodong. Magnetic and Dielectric Properties of Ti ⁴⁺-doped M-type Hexaferrite BaFe_12-_xTi_xO₁₉ Ceramics[J]. Journal of Inorganic Materials, 2021, 36(1): 43-48.

图/表 5

图1 不同Ti掺杂量BaFe12-xTixO19的XRD图谱

Fig. 1 XRD patterns of BaFe12-xTixO19 with different Ti-doping contents

图2 不同Ti掺杂量BaFe12-xTixO19的SEM照片

Fig. 2 SEM images of BaFe12-xTixO19 with different Ti-doping contents

图3 室温下BaFe12-xTixO19 (x=0, 0.5, 1, 1.5)的磁滞回线(a)以及放大图(b), Ms随x变化的关系曲线(c)

Fig. 3 Hysteresis loops (a) ((b): magnified curves), relationship between x and Ms of BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) at room temperature (c)

图4 室温下BaFe12-xTixO19(x=0, 0.5, 1.5)随频率变化的介电系数(a)和介电损耗正切角(b)

Fig. 4 Frequency-dependent permittivity (a) and dielectric loss tangent (b) of BaFe12-xTixO19(x=0, 0.5, 1.5) at room temperature

图5 330 K下在x=0(a)和x=1.5(b)时BaFe12-xTixO19的阻抗谱(插图是对应区域放大图和等效电路模型)

Fig. 5 The impedance spectra of BaFe12-xTixO19 at x=0 (a) and x=1.5 (b) at 330 K with insets showing the enlarged drawing of corresponding region and the equivalent circuit model

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Ti ⁴⁺掺杂M型六角铁氧体BaFe_12-xTi_xO₁₉陶瓷的磁学和介电特性

Magnetic and Dielectric Properties of Ti ⁴⁺-doped M-type Hexaferrite BaFe_12-_xTi_xO₁₉ Ceramics

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