ZnO纳米棒/ZnCo2O4纳米片异质结的制备及其光电探测性能

doi:10.15541/jim20180563

摘要/Abstract

摘要：

ZnO纳米材料异质结是构筑高性能紫外光电探测器的有力候选之一。本工作中, 设计并制备了一种新型ZnO纳米棒/ZnCo₂O₄纳米片异质结, 研究了其电学性能及光电探测性能。使用油水界面自组装, 将ZnCo₂O₄纳米片在ITO玻璃上组装为均匀的薄膜; 通过调控ZnO种子层厚度, 在ZnCo₂O₄纳米片薄膜上水热生长了取向一致、密度适中的ZnO纳米棒阵列, 获得了高质量的ZnO纳米棒/ZnCo₂O₄纳米片异质结。该异质结具有优良的整流特性, 整流比达到673.7; 其工作在反偏状态时, 光暗电流比超过2个量级, 紫外-可见判别比为29.4, 在光电探测中有良好的波长选择特性。研究表明, 该异质结有潜力应用于构筑高性能紫外光电探测器。

关键词: ZnO, 纳米材料, 异质结, 光电探测

Abstract:

Heterojunction-type nanostructures based on ZnO nanomaterials are one of the important candidates for constructing high-performance ultraviolet (UV) photodetectors. In this work, a novel ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was designed and prepared, and the electrical properties and photodetection properties of the as-prepared heterojunction were investigated. ZnCo₂O₄ nanoplates were constructed into uniform thin film on ITO glass substrate using oil/water interface self-assembly. Next, ZnO nanorod arrays with uniform orientation and proper density were grown on ZnCo₂O₄ nanoplates thin film using hydrothermal method with the help from ZnO seed layer. As a result, high-quality ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction was achieved. This heterojunction has a high rectification ratio of 673.7. Under reverse bias, this heterojunction has a light-dark current ration of more than two orders of magnitude. The UV-visible rejection ratio of this heterojunction is 29.4, which indicates its selective detection of UV light. These results effectively prove the potential of this ZnO nanorods/ZnCo₂O₄ nanoplates heterojunction in constructing high-performance UV photodetectors.

Key words: ZnO, nanomaterials, heterojunction, photodetection

中图分类号:

TN364

张之明,方晓生. ZnO纳米棒/ZnCo₂O₄纳米片异质结的制备及其光电探测性能[J]. 无机材料学报, 2019, 34(9): 991-996.

ZHANG Zhi-Ming,FANG Xiao-Sheng. Preparation and Photodetection Property of ZnO Nanorods/ZnCo₂O₄ Nanoplates Heterojunction[J]. Journal of Inorganic Materials, 2019, 34(9): 991-996.

图/表 6

图1 ZnCo2O4纳米片的AFM表征(a)和SEM照片(b), 超声前(c)后(d)的ZnCo2O4纳米片自组装薄膜的光镜照片

Fig. 1 AFM (a) and SEM (b) characterization of ZnCo2O4 nanoplates, optical images of ZnCo2O4 nanoplates thin film before (c) and after (d) ultrasonic treatment

图2 使用不同厚度种子层时水热生长ZnO的SEM照片

Fig. 2 SEM images of ZnO grown with seed layers of different thicknesses (a-b) No seed layer; (c-d) 5 nm seed layer; (e-f) 15 nm seed layer; (g-h) 50 nm seed layer

图3 ZnO纳米棒/ZnCo2O4纳米片异质结器件的结构示意图(a), ZnO纳米棒阵列的I-V特性曲线(b), ZnO纳米棒/ZnCo2O4纳米片异质结的I-V特性曲线(c)及其0~1 V范围内的放大图(d)

Fig. 3 Diagram of ZnO nanorods/ZnCo2O4 nanoplates heterojunction device (a), I-V characteristics of ZnO nanorod arrays (b), I-V characteristics (c) and zoomed in graph (0-1 V) (d) of ZnO nanorods/ZnCo2O4 nanoplates heterojunction

图4 ZnO纳米棒/ZnCo2O4纳米片异质结器件的光电探测性能

Fig. 4 Photodetection properties of ZnO nanorods/ZnCo2O4 nanoplates heterojunction device (a) Band diagram under forward and reverse bias; (b) Photoelectric response to 350 nm (0.753 mW?·cm-2) UV light; (c) Photoelectric response to illumination of different wavelength under reverse bias; (d) Responsivity

图S1 ZnO纳米棒阵列的侧面SEM照片

Fig. S1 Side-view SEM image of ZnO nanorod arrays

图S2 部分ZnO直接接触ITO的ZnO纳米棒/ZnCo2O4纳米片异质结的整流特性

Fig. S2 Rectification characteristics of ZnO nanorods/ZnCo2O4 nanoplates heterojunction with part of the ZnO contacting ITO directly

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ZnO纳米棒/ZnCo₂O₄纳米片异质结的制备及其光电探测性能

Preparation and Photodetection Property of ZnO Nanorods/ZnCo₂O₄ Nanoplates Heterojunction

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