垂直排列ReS2(1-x)Se2x合金纳米片的控制合成及带隙调控

doi:10.15541/jim20180065

无机材料学报 ›› 2018, Vol. 33 ›› Issue (10): 1083-1088.DOI: 10.15541/jim20180065

所属专题：二维材料

垂直排列ReS_2(1-_x₎Se₂_x合金纳米片的控制合成及带隙调控

敖伟栋^1,2, 刘妍², 马青山², 刘欢¹, 周斌², 郑霄家², 于东麒¹, 张文华²

1.辽宁师范大学物理与电子技术学院, 大连 116029;
2.中国工程物理研究院化工材料研究所四川省新材料研究中心, 成都 610200

收稿日期:2018-01-31 修回日期:2018-03-23 出版日期:2018-10-20 网络出版日期:2018-09-25
作者简介:敖伟栋(1990-), 男, 硕士研究生. E-mail: 865592273@qq.com
基金资助:
四川省重点研究开发项目(2017GZ0052);博士后创新人才支持计划(BX201700214)

Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps

AO Wei-Dong^1,2, LIU Yan², MA Qing-Shan², LIU Huan¹, ZHOU Bin², ZHENG Xiao-Jia², YU Dong-Qi¹, ZHANG Wen-Hua²

1.School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;
2. Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China

Received:2018-01-31 Revised:2018-03-23 Published:2018-10-20 Online:2018-09-25
About author:AO Wei-Dong. E-mail: 865592273@qq.com
Supported by:
Key Research and Development Projects of Sichuan Province (2017GZ0052);National Postdoctoral Program for Innovative Talents (BX201700214)

摘要/Abstract

摘要：

二维过渡金属硫属化合物具有优异的电学和光学特性, 形貌控制及带隙调控对于其在光电子学、光子学、纳米电子学领域中的应用至关重要。研究采用CVD技术在SiO₂/Si衬底上生长了垂直排列ReS₂纳米片材料, 硒化处理后得到ReS_2(1-_x₎Se₂_x合金纳米片, 并研究了硒化温度(700、850 和 920℃)及硒化时间(0.5、1和1.5 h)对ReS_2(1-_x₎Se₂_x合金纳米片形貌及组分的影响。XPS元素定量分析及紫外-可见-近红外吸收光谱研究表明ReS_2(1-_x₎Se₂_x样品中Se含量可以在x=0(纯ReS₂)到x=0.86之间调变, 相应材料的带隙可从1.55 eV (800 nm)调变到1.28 eV (969 nm)。SEM结果显示ReS_2(1-_x₎Se₂_x纳米片的结构受到硒化温度和硒化时间的影响, 硒化温度升高和硒化时间延长会破坏纳米片的垂直结构。上述结果表明本研究成功合成了垂直排列ReS_2(1-_x₎Se₂_x合金纳米片, 该材料在电化学催化、功能电子器件和光电子器件方面具有潜在应用价值。

关键词: ReS_2(1-_x₎Se₂_x, ReS₂, 硒化, 垂直排列, 带隙调控

Abstract:

2D transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Both morphology control and bandgap modulation of TMD alloys are critical for their applications in optoelectronics, photonics and nanoelectronics. In this work, the synthesis of vertically aligned ReS_2(1-_x₎Se₂_x alloy nanosheets with tunable compositions on SiO₂/Si substrate was achieved via CVD technology. The resulting ReS_2(1-_x₎Se₂_x nanosheets were obtained by selenizing the vertically aligned ReS₂ nanosheets at various temperatures for different durations. The ReS_2(1-_x₎Se₂_x samples were characterized by XRD, SEM, XPS, HRTEM, elemental mapping, Raman spectra, and UV-Vis-NIR absorption spectra. Experimental results showed that the Se contents in ReS_2(1-_x₎Se₂_x nanosheets can be gradually tuned from x=0 (pure ReS₂) to x=0.86, and the bandgaps of the products were correspondingly modulated from 1.55 eV (800 nm) to 1.28 eV (969 nm). Moreover, the temperature and duration of selenization have huge effect on the morphology of the resulting ReS_2(1-_x₎Se₂_x alloyed nanosheets, as evidenced by SEM observation. The vertical ReS_2(1-_x₎Se₂_x alloy nanosheets may have significant application potential, e. g. , in the electrochemical catalysis, functional electeonic and optoelectronic devices.

Key words: ReS_2(1-_x₎Se₂_x, ReS₂, selenizing, vertically aligned, bandgap modulation

中图分类号:

TQ174

敖伟栋, 刘妍, 马青山, 刘欢, 周斌, 郑霄家, 于东麒, 张文华. 垂直排列ReS_2(1-_x₎Se₂_x合金纳米片的控制合成及带隙调控[J]. 无机材料学报, 2018, 33(10): 1083-1088.

AO Wei-Dong, LIU Yan, MA Qing-Shan, LIU Huan, ZHOU Bin, ZHENG Xiao-Jia, YU Dong-Qi, ZHANG Wen-Hua. Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps[J]. Journal of Inorganic Materials, 2018, 33(10): 1083-1088.

图/表 6

图1 (a)~(b) ReS2纳米片和(c)~(h)不同硒化条件下得到的ReS2(1-x)Se2x纳米片的SEM照片

Fig. 1 SEM image of ReS2 nanosheets grown at 450℃ (a,b) (2.5 h), and (c-h) SEM images of ReS2(1-x)Se2x nanosheets selenized at different conditions (c) 700℃ (0.5 h); (d) 850℃ (0.5 h); (e) 920℃ (0.5 h); (f) 850℃ (1 h); (g) 850℃ (1.5 h); (h) 920℃ (1 h).

图2 (a) ReS2(1-x)Se2x合金的晶体结构示意图和(b)不同温度硒化得到的ReS2(1-x)Se2x纳米片的XRD图谱

Fig. 2 (a) Schematic illustration of the crystal structure of ReS2(1-x)Se2x nanosheets and (b) XRD patterns of (i) ReS2 nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x nanosheets selenized at 920℃ for 0.5 h; (v) ReSe2 nanosheets grown at 750℃

图3 (a) ReS2纳米片和(b)ReS2(1-x)Se2x纳米片的HRTEM照片; (c) ReS2(1-x)Se2x 纳米片的TEM照片及(d)~(f)相应的元素分布

Fig. 3 (a,b) HRTEM images of ReS2 and ReS2(1-x)Se2x nanosheets, (c) TEM image of the ReS2(1-x)Se2x nanosheets and (d-f) elemental mapping for the ReS2(1-x)Se2x nanosheets

图4 不同硒化温度下得到的ReS2(1-x)Se2x纳米片的XPS 图谱

Fig. 4 Core-level XPS spectra of the ReS2(1-x)Se2x nanosheets selenized at different temperatures(i) ReS2 (x=0) nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x (x=0.21) nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x (x=0.47) nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x (x=0.86) nanosheets selenized at 920℃ for 0.5 h

图5 不同组分ReS2(1-x)Se2x纳米片的拉曼光谱

Fig. 5 Raman spectra of the ReS2(1-x)Se2x nanosheets(i) ReS2 (x=0) nanosheets grown at 450℃; (ii) ReS2(1-x)Se2x (x=0.21) nanosheets selenized at 700℃ for 0.5 h; (iii) ReS2(1-x)Se2x (x=0.47) nanosheets selenized at 850℃ for 0.5 h; (iv) ReS2(1-x)Se2x (x=0.86) nanosheets selenized at 920℃ for 0.5 h; (v) ReSe2 (x=1) nanosheets grown at 750℃

图6 (a)同组分ReS2(1-x)Se2x纳米片的UV-Vis-NIR吸收光谱以及(b)纳米片的带隙与Se含量间的关系

Fig. 6 (a) UV-Vis-NIR absorption spectra for the ReS2(1-x)Se2x nanosheets with various Se contents and (b) relationship between the band gaps of the nanosheets and the contents of Se in the products

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垂直排列ReS_2(1-_x₎Se₂_x合金纳米片的控制合成及带隙调控

Controllable Synthesis of Vertically Aligned ReS_2(1-_x₎Se₂_x Nanosheets with Tunable Chemical Compositions and Bandgaps

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